Method for local hot spot fixing

ABSTRACT

Efficient and cost-effective systems and methods for detecting and correcting hot spots of semiconductor devices are disclosed. In one aspect, a method includes providing an input file having a device layout; performing a hot spot detection on the input file; and then modifying the device layout based on the hot spots detected to create an output file. In another aspect, a method includes providing an input file having a device layout; selecting a first local region of the device layout; performing a first hot spot detection on the first local region; modifying the first local region based on the hot spots detected to create a first output file; and repeating for other local regions of the device layout. In some aspects, hot spots are detected by comparing parameters of the device layout with a set of hot spot rules to determine if the device layout satisfies the hot spot rules.

CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application60/800,526 entitled “Design for Manufacturability,” filed May 15, 2006,herein incorporated by reference in its entirety.

BACKGROUND

As semiconductor fabrication technologies are continually progressing tosmaller feature sizes such as 65 nanometers, 45 nanometers, and below,simply scaling down similar designs used at the larger feature sizesoften results in hot spots or problem areas in the device. Hot spots inthis context refer to characteristics of the device that prevent thedevice from performing as desired. Examples of hot spots includepinching, bridging, dishing, erosion, RC delay, metal line thicknessvariations, Cu residue, and other characteristics that affect thedesired device performance. These hot spots can be due to the circuitdesign and/or the process controls. Efficient and cost-effective systemsand methods for detecting and correcting hot spots are needed. Althoughexisting devices and methods have been generally adequate for theirintended purposes, they have not been entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor wafer illustrating adishing effect.

FIG. 2 is a cross-sectional view of a semiconductor wafer illustratingan erosion effect.

FIG. 3 is a top-down view a semiconductor wafer illustrating a bridgingeffect.

FIG. 4 is a top-down view a semiconductor wafer illustrating a bridgingeffect.

FIG. 5 is a top-down view a semiconductor wafer illustrating a pinchingeffect.

FIG. 6 is a top-down view a semiconductor wafer illustrating a pinchingeffect.

FIG. 7 is a block diagram of an embodiment of a method according to oneaspect of the present disclosure for detecting and correcting hot spotsof a semiconductor device.

FIG. 8 is a block diagram of an embodiment of a method according to oneaspect of the present disclosure for calibrating a system for detectingand correcting hot spots of a semiconductor device.

FIG. 9 is a block diagram of an embodiment of a method according to oneaspect of the present disclosure for detecting and correcting hot spotsof a semiconductor device.

FIG. 10 is a block diagram of an exemplary embodiment of a methodsimilar to the method of FIG. 9.

FIG. 11 is a block diagram of an embodiment of a method according to oneaspect of the present disclosure for creating a final layout from acircuit design.

FIG. 12 is a block diagram of an exemplary embodiment of a method ofperforming the routing step of the method of FIG. 11.

FIG. 13 is a block diagram of an embodiment of a method according to oneaspect of the present disclosure for modifying a circuit design tocreate a hotspot-free final layout.

FIG. 14 is a top-down view of a portion of a semiconductor wafer.

FIG. 15 is an alternative top-down view of a section of the portion ofthe semiconductor of FIG. 14.

FIG. 16 is a top-down view of a portion of a semiconductor wafer.

FIG. 17 is a top-down view of the portion of the semiconductor wafer ofFIG. 16 after rerouting according to a method of one aspect of thepresent disclosure.

FIG. 18 is a diagrammatic view of a node for implementing variousembodiments of the methods of the present disclosure.

DETAILED DESCRIPTION

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

It is understood that the following disclosure provides many differentembodiments, or examples, capable of implementing different features.Specific examples of components and arrangements are described below tosimplify and thus clarify the present disclosure. These are, of course,merely examples and are not intended to be limiting. In many instances,the features of one embodiment may be combined with the features ofother embodiments. In addition, the present disclosure may repeatreference numerals and/or letters in the various exemplary embodiments.This repetition is for the purpose of simplicity and clarity and doesnot in itself dictate a relationship between the various embodimentsand/or configurations discussed.

As semiconductor fabrication technologies are continually progressing tosmaller feature sizes such as 65 nanometers, 45 nanometers, and below,scaling down similar designs used at the larger feature sizes oftenresults in hot spots or problem areas in the device. Hot spots in thiscontext refer to characteristics of the device that prevent the devicefrom performing as desired. Examples of hot spots include pinching,bridging, dishing, erosion, RC delay, metal line thickness variations,Cu residue, and other characteristics that affect the desired deviceperformance. These hot spots can be due to the circuit design and/or theprocess controls.

A dual damascene process is often used in semiconductor fabrication whenfeature size is scaled down and technology moves to submicron levels. Inthe dual damascene process, copper or other conductive materials aregenerally used as conductive material for interconnection. Examples ofother conductive materials include, but are not limited to tungsten,titanium, and titanium nitride. Also, silicon oxide, fluorinated silicaglass, or other low dielectric constant (k) materials are used forinter-level dielectric (ILD) layers. Often a chemical mechanicalpolishing (CMP) technique is used to etch back and globally planarizethe conductive material and/or ILD. However, because the removal rate ofthe metal and dielectric materials are often different, CMP can createundesirable dishing and/or erosion effects that result in hot spots.Dishing often occurs when the metal recedes below the level of theadjacent dielectric. Erosion is a localized thinning of the dielectric.Dishing and erosion are sensitive to pattern structure, pattern density,and processing.

FIGS. 1-6 illustrate different exemplary hot spots. FIGS. 1 and 2 arecross-sectional views of two examples of dishing and erosion effects ina semiconductor wafer. Often such effects are caused by chemicalmechanical polishing (CMP) or other semiconductor processing techniques.In some instances, dishing and erosion can result from the formation ofan isolation structure such as shallow trench isolation (STI). In FIG.1, a semiconductor device 110 includes a dielectric material 112 and ametal 114. In a planarizing process, such as CMP, when the removal rateof a metal feature is higher than that of a dielectric feature theresulting dip or deviation from a substantially planar surface profileis referred to as dishing. The device 110 exhibits a dishing effect 116because the metal 114 has a higher polishing rate than that of thedielectric material 112. In the current embodiment, the metal 114 mayinclude copper, tungsten, titanium, titanium nitride, tantalum, tantalumnitride, other metals and/or combinations thereof. Also, the dielectricmaterial 112 may include silicon oxide, fluorinated silica glass (FSG),low k materials, and/or combinations thereof. The dielectric 112 and themetal 114 may be part of an interconnection structure in a integratedsemiconductor circuit and may be fabricated by dual damascene processingincluding multiple processes such as deposition, etching, and CMP.

In FIG. 2, a semiconductor device 120 includes a dielectric material 122and a metal 124. In a planarizing process, such as CMP, when the removalrate of a dielectric layer is higher than that of a metal feature, theresulting dip or deviation from a substantially planar surface profileis referred to as erosion. The device 120 exhibits an erosion effect 126because the dielectric material 122 has a higher polishing rate thanthat of the metal 124.

FIGS. 3 and 4 are top-down views of two examples of bridging effects ina semiconductor wafer. In FIG. 3, a semiconductor device 130 includes ametal line 132 and a metal line 134. The device 130 exhibits a bridgingeffect 136 between the metal lines 132 and 134. In FIG. 4, asemiconductor device 140 exhibits a line-end bridging effect 142. Thebridging effects 136 and 142 may be caused by numerous factorsincluding, but not limited to layout design, processing controls,inadequate line spacing, dishing, erosion, metal line thicknessvariations, and/or the presence of Cu residue.

FIGS. 5 and 6 are top-down views of two examples of pinching effects ina semiconductor wafer. In FIG. 5, a semiconductor device 150 includesmetals line 152 and 154 on either side of a metal line 156. The device150 exhibits a pinching effect 158 along the metal line 156 between themetal lines 152 and 154. In FIG. 6, a semiconductor device 160 exhibitsa pinching effect 162. The pinching effects 158 and 162 may be caused bynumerous factors including, but not limited to layout design, processingcontrols, inadequate line spacing, dishing, erosion, metal linethickness variations, and/or the presence of Cu residue.

The semiconductor devices 110, 120, 130, 140, 150, and 160 may alsoinclude electric circuits and a semiconductor substrate. The electriccircuits may include metal oxide semiconductor filed effect transistors(MOSFET), bipolar transistors, diodes, memory cells, resistors,capacitors, inductors, high voltage transistors, sensors, orcombinations thereof. The semiconductor substrate may comprise anelementary semiconductor (such as crystal silicon, polycrystallinesilicon, amorphous silicon and germanium), a compound semiconductor(such as silicon carbide and gallium arsenic), an alloy semiconductor(such as silicon germanium, gallium arsenide phosphide, aluminum indiumarsenide, aluminum gallium arsenide and gallium indium phosphide) and/orcombinations thereof. The semiconductor substrate may be a semiconductoron insulator (SOI), having a buried oxide (BOX) structure. In otherexamples, the compound semiconductor substrate may include a multiplesilicon structure, or the silicon substrate may include a multilayercompound semiconductor structure.

In some embodiments, the present disclosure is directed towards a systemand method for identifying and correcting hot spots of a semiconductordevice, including hot spots caused by dishing, erosion, bridging, andpinching, as described above, and other hot spots. In particular, insome embodiments the system and method are adapted to reduce the costand time required to produce a semiconductor device with the desiredproperties by identifying and correcting hot spots during the design andsimulation phases, rather than after wafer processing. Some embodimentsof the system and method are for use in design for manufacture (DFM)applications. Further, in some embodiments the methods of the presentdisclosure are performed by a router system.

FIG. 7 is a block diagram of an embodiment of a method 200 according toone aspect of the present disclosure for detecting and correcting hotspots of a semiconductor device. The method 200 begins with step 202 inwhich an input file is provided. The input file is a circuit layout orchip design and in some embodiments is retrieved from a design database.The circuit layout is provided in a computer aided design format, suchas GDS II format. In some embodiments, the circuit layout is generatedby a virtual process simulator, such as a VCMP or other processsimulation tool. Further, the layout may be created by using severalprocess simulators, such as ECP model, a CMP model, and an etchingmodel. Other combinations of simulators may be used as well. Typically,the circuit layout includes a plurality of metal layers. Each metallayer includes metal interconnects disposed in a dielectric layer. Themetal layers of the circuit layout are divided into a plurality ofregions (also known as cells, grids, or tiles). It is understood thatthe number of regions can vary depending on the technology and thecomplexity of the circuit design. In this regard, the methods describedherein may be used on a single layer, a plurality of layers, and/or allof the layers of a chip design. In addition, the methods describedherein may be used for detecting hot spots due to the interactionbetween the layers and/or the processes used to manufacture the device,such as ECP, CMP, and etching, for example.

The method 200 continues with step 204 in which a hot spot detectorperforms a hot spot detection on the input file. The hot spot detectoris a software tool that determines whether the circuit layout of theinput file complies with a set of hot spot rules. The hot spot detectorcompares the parameters of the circuit layout of the input file with aplurality of hot spot rules and/or specifications from the hot spot ruledatabase 206. The hot spot detector may compare the design layout as awhole and/or compare individual regions of the design layout one at atime until all regions have been compared to the hot spotrules/specifications. For the sake of example, one such rule is aminimum density rule for interconnects in the metal layer. Each regionof the metal layer has a local density associated with it. The localdensity for a given region is the total area of the interconnectslocated in the region divided by the total area of that region. Theminimum density rule requires that each region have a local densityequal to or greater than a minimum density value. Thus, the hot spotdetector compares the local density of each region with the minimumdensity value to determine compliance with the rule. Several otherexemplary rules will be discussed below, but by no means provide anexhaustive list of the possible hot spot rules.

It is understood that use of the term hot spot detector is intended toinclude software applications that can be implemented by variousprogramming languages to determine the existence of hot spots within aparticular pattern layout based on a set of hot spot rules. It is alsounderstood that the hot spot rules may be stored in database accessibleby the hot spot detector and/or may be part of the hot spot detectorprogram itself. The hot spot rules may be organized based on processingtype, layout designs, feature sizes, and/or other appropriate groupings.In some embodiments, the hot spot rules are predefined. Further, in someembodiments the hot spot rules are definable and/or additional hot spotrules can be added to and/or removed from the set of hot spot rules.

The method 200 continues with step 208 in which the hot spot detectordetermines whether the input file violates one of the plurality of hotspot rules. Continuing the example of the minimum density rule fromabove, if the hot spot detector determines that the local density ofeach region of the input file satisfies the minimum density value andall other hot spot rules, then the method 200 continues to step 210 inwhich an output file is output by the system. The output file is arevised circuit layout that may be provided in a computer aided designformat, such as GDS II format. In some embodiments, the output is in thesame format as the input file. Thus, the output file may be generated bya virtual process simulator, such as a VCMP or other process simulationtool. Further, the output file may be created by using several processsimulators, such as ECP model, a CMP model, and an etching model and/orother combinations.

The output file is optimized for device manufacture as it does notviolate any of the hot spot rules. In some embodiments, the output fileis subjected to further rule-based testing or otherwise modified ortested to further improve the design and/or layout of the device beforethe manufacturing phase. On the other hand, if the hot spot detectordetermines that the local density of a region of the input file violatesthe minimum density value, then the method 200 continues to step 212 inwhich the input file is modified in an attempt to avoid violation of theminimum density value and/or any of the other hot spot rules. In someembodiments, the modification is based on a set of guidance parametersand/or rules based on the hot spot rule that was violated. The suggestedmodifications based on the guidance parameters may be made to the inputfile by a computer system or program and/or directly by a user. When themodifications are made by a user, the user may manually direct thechanges through a computer system/program. Where the modifications aremade by a computer system/program, the guidance parameters may be storedin database accessible by computer system/program. Similarly, where themodifications are made by a user, the guidance parameters may be storedin human intelligible form accessible by user. In some embodiments, thesystem will suggest a modified device layout based on the guidanceparameters, which the user may then make additional changes to in aneffort to achieve the optimum layout design.

After the modifications have been made, then the method continues withstep 202 at which a second input file is provided to the system based onthe guidance parameters. Again, the input file is a circuit layout orchip design and in some embodiments is retrieved from a design database.The circuit layout is provided in a computer aided design format, suchas GDS II format. In some embodiments, the circuit layout is generatedby a virtual process simulator, such as a VCMP or other processsimulation tool. After the modified input file is provided the method200 continues through steps 204, 208, and 212 until the input file doesnot violate any of the hot spot rules. This iterative process continuesuntil the input file does not violate any of the hot spot rules, atwhich point the method continues with step 210 where an output file isoutput by the system as described above. Again, the output file isoptimized for device manufacture as it does not violate any of the hotspot rules. However, in some embodiments the output file is subjected tofurther rule-based testing or otherwise modified or tested to furtherimprove the design and/or layout of the device before the manufacturingphase.

In some embodiments, the present disclosure is directed towards a systemand method for calibrating a hot spot detection and correction system.For example, systems and methods for identifying and correcting hotspots of a semiconductor device, including hot spots caused by dishing,erosion, bridging, pinching, and other hot spots are disclosed. Inparticular, these system and method are adapted to reduce the cost andtime required to produce a semiconductor device with the desiredproperties by identifying and correcting hot spots during the design andsimulation phases, rather than after wafer processing. Some embodimentsof the system and method are for use in design for manufacture (DFM)applications. However, if the systems and methods are not properlycalibrated, then they will not provide the accurate and/or precise datanecessary to identify and correct the hot spots. Again, the methodsdescribed herein may be used on a single layer, a plurality of layers,and/or all of the layers of a chip design. In addition, the methodsdescribed herein may be used for detecting hot spots due to theinteraction between the layers and/or the processes used to manufacturethe device, such as ECP, CMP, and etching, for example.

FIG. 8 is a block diagram of an embodiment of a method 300 according toone aspect of the present disclosure for calibrating a system fordetecting and correcting hot spots of a semiconductor device. The method300 begins with step 302 in which an input file is provided. The inputfile is a circuit layout or chip design and in some embodiments isretrieved from a design database. The circuit layout is provided in acomputer aided design format, such as GDS II format. In someembodiments, the circuit layout is generated by a virtual processsimulator, such as a VCMP or other process simulation tool. Typically,the circuit layout includes a plurality of metal layers. Each metallayer includes metal interconnects disposed in a dielectric layer. Themetal layers of the circuit layout are divided into a plurality ofregions (also known as cells, grids, or tiles). It is understood thatthe number of regions can vary depending on the technology and thecomplexity of the circuit design.

The method 300 continues with step 304 in which a hot spot detectorperforms a hot spot prediction/detection on the input file. The hot spotdetector is a software tool that determines the location and parametersof potential hot spots including both physical and electrical hot spots.For the sake of example, one such physical parameter is the size of asurface variation that may result in a hot spot. Such surface variationsmay be caused by such things as dishing, erosion, or otherwise resultfrom the processing of the device. Thus, continuing the example, the hotspot detector may indicate that a certain region of the device may havea 15 mm surface variation. Surface variations are merely one example ofa physical hot spot parameter that may be used by the hot spot detector.For the sake of example, one electrical parameter is the predicted RCcharacteristics of a design. Several other exemplary rules will bediscussed below, but by no means provide an exhaustive list of thepossible hot spot rules and parameters that may be utilized. In someembodiments, the hot spot detector determines the location and parameterof a hot spot by comparing the circuit layout of the input file to a setof hot spot rules. The hot spot detector compares the parameters of thecircuit layout of the input file with a plurality of hot spot rulesand/or specifications from the hot spot rule database. The hot spotdetector may compare the design layout as a whole and/or compareindividual regions of the design layout one at a time until all regionshave been compared to the hot spot rules/specifications.

The method 300 continues with step 306 in which an actual device ismanufactured according to the design layout of the input file. Thedevice may be manufactured as test wafer, a production wafer, formed onthe streets of a wafer, or otherwise manufactured. In some embodiments,the device is manufactured on the production lines and/or processinglines that the devices will be manufactured on. The method continueswith step 308 in which the manufactured device is subjected to a hotspot analysis to detect hot spots on the device. Various types ofanalysis may be utilized in order to detect hot spots including, but notlimited to, electron microscopy, scanning electron microscopy (SEM),scanning tunneling microscopy (STM), transmission electron microscopy(TEM), atomic force microscopy (AFM), other methods, and combinationsthereof. For example, continuing the surface variation example fromabove, the device may be analyzed using AFM to detect undesired surfacevariations indicative of a hot spot. Further, the accuracy of the AFMprofile may be verified by comparing the AFM profile to SEM and/or TEMprofiles. Similarly, the electrical characteristics, such as RC, of theactual device are determined as well.

The method continues at step 310 where the hot spot prediction of theinput file is compared to the hot spot detection of the actual device todetermine whether the hot spot detector is consistent with the actualprocessing. If the hot spot prediction of the input file is consistentwith the hot spot detection of the actual device, then the methodcontinues at step 312 with implementation of the hot spot detection andcorrection system. That is, if the hot spot detector is consistent withthe actual results of the processing techniques, then the system is usedfor detecting and correcting hot spots in circuit design layouts.However, if the hot spot prediction of the input file is inconsistentwith the hot spot detection of the actual device, then the methodcontinues at step 314, 316 with calibration of the hot spot detector.For example, continuing the surface variation example, if the hot spotdetector predicts a surface variation of 15 mm, but the AFM analysisreveals a 25 mm surface variation, then the hot spot detector must becalibrated accordingly.

Step 314 represents a first method of calibrating the hot spot detector.In step 314 the parameters and/or logic of the hot spot detector isadjusted so as to match the hot spots detected on the actual device. Itis understood, that numerous hot spot parameters may be analyzed in aneffort to calibrate the hot spot detector in this manner. In thatregard, a calibration circuit layout or other test circuit with aplurality of known hot spots may be used to calibrate the hot spotdetector. After calibration of the hot spot detector, the methodcontinues at step 312 with the implementation of the hot spot detector.

Step 316 represents a second method of calibrating the hot spotdetector. In step 316 the parameters and/or logic of the hot spotdetector is adjusted so as to match the hot spots detected on the actualdevice. It is understood, that numerous hot spot parameters may beanalyzed in an effort to calibrate the hot spot detector in this manner.In that regard, a calibration circuit layout or other test circuit witha plurality of known hot spots may be used to calibrate the hot spotdetector. In a similar manner, a plurality of calibration circuitlayouts or test circuits with known hot spots may be used to calibratethe hot spot detector. After calibration of the hot spot detector, themethod continues at step 304 where the hot spot detector performs a hotspot prediction/detection on the input file based on the recalibratedhot spot detection parameters.

Then the method 300 continues at step 310 where the hot spot predictionof the input file is compared to the hot spot detection of the actualdevice to determine whether the hot spot detector is consistent with theactual processing. In that regard, a new device may be manufactured forcomparison or the actual device manufactured during the first comparisonmay be utilized again. If the hot spot prediction of the input file isconsistent with the hot spot detection of the actual device, then themethod continues at step 312 with implementation of the hot spotdetection and correction system. However, if the hot spot prediction ofthe input file is inconsistent with the hot spot detection of the actualdevice, then the method continues at step 316 with calibration of thehot spot detector, as described above. This process can be iterateduntil the hot spot detector is appropriately calibrated to be consistentwith the hot spots of the manufactured device(s). After the hot spotdetector is calibrated so that the predicted hot spots are consistentwith the detected hot spots of the actual device, then the methodcontinues at step 312 with the implementation of the hot spot detectionand correction system.

In some embodiments, the present disclosure is directed towards a systemand method for identifying and correcting hot spots of a semiconductordevice, including hot spots caused by dishing, erosion, bridging,pinching, and other hot spots. In particular, in some embodiments thesystem and method are adapted to reduce the cost and time required toproduce a semiconductor device with the desired properties byidentifying and correcting hot spots during the design and simulationphases, rather than after wafer processing. Some embodiments of thesystem and method are for use in design for manufacture (DFM)applications. Further, in some embodiments the present disclosuredetects and corrects hot spots within local regions of a device.Detecting and correcting hot spots by separating a semiconductor into aplurality of local regions can increase the processing speed and reducethe required computer processing and memory power necessary for theanalysis of the global design layout. By analyzing and correcting thehot spots of each of the local regions, the hot spots of the globaldesign layout are remedied. Again, the methods described herein may beused on a single layer, a plurality of layers, and/or all of the layersof a chip design. In addition, the methods described herein may be usedfor detecting hot spots due to the interaction between the layers and/orthe processes used to manufacture the device, such as ECP, CMP, andetching, for example.

FIGS. 9 and 10 are block diagrams illustrating additional embodiments ofthe present disclosure. FIG. 9 is a block diagram of an embodiment of amethod 400 according to one aspect of the present disclosure fordetecting and correcting hot spots of a semiconductor device. The method400 begins with step 402 in which an input file is provided. The inputfile is a circuit layout or chip design and in some embodiments isretrieved from a design database. The circuit layout is provided in acomputer aided design format, such as GDS II format. In someembodiments, the circuit layout is generated by a virtual processsimulator, such as a VCMP or other process simulation tool. Typically,the circuit layout includes a plurality of metal layers. Each metallayer includes metal interconnects disposed in a dielectric layer. Themetal layers of the circuit layout are divided into a plurality ofregions (also known as cells, grids, or tiles). It is understood thatthe number of regions can vary depending on the technology and thecomplexity of the circuit design. Again, the methods described hereinmay be used on a single layer, a plurality of layers, and/or all of thelayers of a chip design. In addition, the methods described herein maybe used for detecting hot spots due to the interaction between thelayers and/or the processes used to manufacture the device, such as ECP,CMP, and etching, for example.

The method 400 continues with step 404 in which a local region isselected for analysis. The method 400 continues with step 406 in which ahot spot detector performs a hot spot detection on the input file. Thehot spot detector is a software tool that determines whether theselected local region of the input file complies with a set of hot spotrules. The hot spot detector compares the parameters of the local regionwith a plurality of hot spot rules and/or specifications from a hot spotrules database. The hot spot detector determines whether the input fileviolates any of the plurality of hot spot rules. If the hot spotdetector determines that the local region of the input file violates atleast one of the hot spot rules, then the method 400 continues to step408 in which the local region is modified to avoid violation of the hotspot rule(s). In some embodiments, the modification is based on a set ofguidance parameters and/or rules based on the hot spot rule that wasviolated. As described above with respect to method 200, the suggestedmodifications based on the guidance parameters may be made to the inputfile by a computer system or program and/or directly by a user. On theother hand, if the hot spot detector determines that the local region ofthe input file satisfies the all of the hot spot rules, then nomodifications are made to the region.

After the local region has been modified and/or the local region doesnot violate any of the hot spot rules, then the method 400 continues atstep 410 where it is determined whether all of the local regions of theinput file have been analyzed by the hot spot detector. If all of thelocal regions have been analyzed and determined to satisfy the hot spotrules, then the method 400 continues to step 412 in which an output fileis output by the system. The output file is optimized for devicemanufacture as it does not violate any of the hot spot rules. In someembodiments, the output file is subjected to further rule-based testingor otherwise modified or tested to further improve the design and/orlayout of the device before the manufacturing phase. On the other hand,if not all of the local regions have been analyzed, then the method 400returns to step 404 and another local region is selected. The method 400continues this iterative loop until all of the local regions of theinput file have been subjected to hot spot detection. Once all of thelocal regions have been analyzed and determined to satisfy the hot spotrules, then the method 400 continues to step 412 in which the outputfile is output by the system.

FIG. 10 is a block diagram of an embodiment of the method 400 accordingto one aspect of the present disclosure for detecting and correcting hotspots of a semiconductor device. In particular, the block diagram ofFIG. 10 illustrates an exemplary embodiment of the interaction of steps406 and 408 within the method 400, which will now be discussed ingreater detail. Step 406 begins with step 414 in which the spot detectortesting the selected local region for a violation of hot spot parameterA. Hot spot parameter A is intended to represent any hot spot rule,parameter, or specification. However, for the sake of example aparticular rule will now be discussed. In one embodiment, hot spotparameter A is a local maximum metal density. Each region of a metallayer has a local density associated with it. The local density for agiven region is the total area of the interconnects located in theregion divided by the total area of that region. The maximum densityrule requires that each region have a local density equal to or lessthan a maximum density value, such as 90% for example. Thus, at step 416the hot spot detector compares the density of the selected local regionwith the maximum density value to determine compliance with the rule.

If the selected local region violates the hot spot parameter A, then themethod 400 continues to step 418 where a set of guidance rules relatedto hot spot parameter A are provided. The guidance rules providesuggestions for possible solutions to the detected hot spot(s). Thus,continuing the maximum density example from above, the guidance rulesmight include such suggestions as: (1) Add oxide slot in wide metalareas; (2) Separate wide metal line into several narrower lines; (3)Remove narrow metal lines from upper metal layers that cross wide metalareas; and/or (4) Other appropriate rule suggestions. Then the method400 continues to step 420 where the selected local region is modifiedbased on the guidance rules and/or other specifications in an effort tocomply with hot spot parameter A. After the selected local region hasbeen modified, the method 400 continues to step 422 in which the spotdetector tests the selected local region for a violation of hot spotparameter B. On the other hand, if the selected local region does notviolate the hot spot parameter A, then no modifications are made and themethod 400 continues directly to step 422.

Step 422 comprises the hot spot detector testing the selected localregion for a violation of hot spot parameter B. Hot spot parameter B isintended to represent any hot spot rule, parameter, or specification.However, for the sake of example a particular rule will now bediscussed. In one embodiment, hot spot parameter B is a minimum linespacing between wide metal lines. The minimum line spacing rule(s)require that metal lines of a certain width have a certain amount ofspacing between them. If the metal lines do not have sufficient spacingthen minimum line spacing rule is violated. For example, the minimumline spacing rule might specify that lines having a width between1.5-4.5 μm have a spacing of at least 0.5 μm and lines having a widthgreater than 4.5 μm have a spacing of at least 1.5 μm. Thus, at step 424the hot spot detector compares the spacing of the metal lines of theselected local region with the minimum line spacing rule(s) to determinecompliance with the rule.

If the selected local region violates the hot spot parameter B, then themethod 400 continues to step 426 where a set of guidance rules relatedto hot spot parameter B are provided. The guidance rules providesuggestions for possible solutions to the detected hot spot(s). Thus,continuing the minimum line spacing rule example from above, theguidance rules might include such suggestions as: (1) Increase spacingof lines having a width between 1.5-4.5 μm to at least 0.5 μm; (2)Increase spacing of lines having a width greater than 4.5 μm to at least1.5 μm; (3) Remove metal lines in upper metal layers that cross widemetal areas; and/or (4) Other appropriate rule suggestions. Then themethod 400 continues to step 428 where the selected local region ismodified based on the guidance rules and/or other specifications in aneffort to comply with hot spot parameter B. After the selected localregion has been modified, the method 400 continues to step 430 in whichthe spot detector tests the selected local region for a violation of theremaining hot spot parameters. On the other hand, if the selected localregion does not violate the hot spot parameter B, then no modificationsare made and the method 400 continues directly to step 430.

Step 430 and hot spot parameter X represent generically the hot spotdetection and modification of the selected local region based on anyremaining hot spot parameters. In this regard, the method 400 mayinclude a single hot spot parameter or a plurality of hot spotparameters. The hot spot parameters that are checked may be selectedbased on the processing techniques, feature size, and/or otherattributes of the design layout and/or manufacturing process. Step 432comprises the hot spot detector testing the selected local region for aviolation of hot spot parameter X. Again, hot spot parameter X isintended to represent any single or plurality of remaining hot spotrules, parameters, or specifications. However, for the sake of example aparticular hot spot parameter will now be discussed. In one embodiment,hot spot parameter X is a maximum metal density deviation betweenadjacent local regions. The maximum metal density deviation rulerequires that adjacent local regions have a metal density within acertain range of one another. If the metal density between two adjacentregions is greater than the maximum deviation allowed by the parameterthen the hot spot rule is violated. Thus, at step 434 the hot spotdetector compares the spacing of the metal lines of the selected localregion with the minimum line spacing rule(s) to determine compliancewith the rule.

If the selected local region violates the hot spot parameter X, then themethod 400 continues to step 436 where a set of guidance rules relatedto hot spot parameter X are provided. The guidance rules providesuggestions for possible solutions to the detected hot spot(s). Thus,continuing the maximum metal density deviation example from above, theguidance rules might include such suggestions as: (1) Insert dummy metalinto isolation region; (2) Separate wide metal line into severalnarrower lines; (3) Add oxide slot in wide metal areas; (4) Reduce themetal density deviation to less than 15%; and/or (5) Other appropriaterule suggestions. Then the method 400 continues to step 438 where theselected local region is modified based on the guidance rules and/orother specifications in an effort to comply with hot spot parameter A.After the selected local region has been modified or if the local regioninitially satisfies hot spot parameter X, the method 400 continuestesting the selected local region for violations of any remaining hotspot parameters.

Once all of the hot spot parameters have been tested and correspondingmodifications have been suggested/made, then the method continues tostep 410 where it is determined whether all of the local regions of theinput file have been analyzed by the hot spot detector. If all of thelocal regions have been analyzed and determined to satisfy the hot spotrules, then the method 400 continues on to step 412 where the outputfile is output by the system. On the other hand, if not all of the localregions have been analyzed, then the method 400 returns to step 404 andanother local region is selected. The method 400 continues thisiterative loop until all of the local regions of the input file havebeen subjected to hot spot detection. Once all of the local regions havebeen analyzed and determined to satisfy the hot spot rules, then themethod 400 continues to step 412 in which the output file is output bythe system.

In the illustrated embodiment, the hot spot detection of step 406 iscarried out in successive steps based on the various hot spot parametersA, B, . . . , X. In other embodiments, however, the hot spot detectionof the various hot spot parameters are carried out simultaneously. Insome embodiments, the hot spot detection is carried out in auser-defined sequence. The user-defined sequence may be limited tospecific region(s), simulation efficiencies, and combinations thereof.Further, in the described embodiment the circuit layout is only testedbased on a single division of the layout into local regions. However inother embodiments, the device layout is organized by more than one localregions layout having different boundaries. The hot spot detection andmodification steps of the method can then be repeated for the differentlocal region divisions. Dividing the layout into different regionalpatterns can alleviate the potential for hot spots being missed orundetected due to the division of the layout. For example, in onedivision a high density metal area indicative of a potential hot spotcould be divided roughly in half by the regional pattern to create twoareas with moderately high metal density satisfying the hot spotparameters, but in the second division the high density metal area maybe found in a single region and the hot spot parameter of maximum localmetal density would be violated.

In some embodiments, the present disclosure is directed towards a systemand method for routing a circuit design in an effort to avoid and/orcorrect any potential hot spots of a semiconductor device, including hotspots caused by dishing, erosion, bridging, pinching, and other hotspots. In particular, in some embodiments the system and method areadapted to reduce the cost and time required to produce a semiconductordevice with the desired properties by identifying and correcting anypotential hot spots during the design and simulation phases, rather thanafter wafer processing. Some embodiments of the system and method arefor use in design for manufacture (DFM) applications. Some embodimentsof the system and method are utilized in a router or routing system.

In some embodiments the present disclosure corrects hot spots withinlocal regions of a device layout. Correcting hot spots by separating asemiconductor layout into a plurality of local regions can increase theprocessing speed and reduce the required computer processing and memorypower necessary for the elimination of hot spots from the entire designlayout. Then by correcting the hot spots of each of the local regions,the hot spots of the global design layout are also remedied. In someembodiments, the present disclosure corrects hot spots on the globaldesign layout level. In some embodiments, the present disclosurecorrects hot spots on both local regions and the global design layout.Again, the methods described herein may be used on a single layer, aplurality of layers, and/or all of the layers of a chip design. Inaddition, the methods described herein may be used for correcting hotspots due to the interaction between the layers and/or the processesused to manufacture the device.

FIG. 11 is a block diagram of an embodiment of a method 498 according toone aspect of the present disclosure for creating a final layout from acircuit design. In particular, the method 498 begins at step 499 where acircuit design is provided. The method 498 continues at step 500 withthe routing of the circuit design by a router. As with other embodimentsof the present disclosure, the circuit design is often provided in acomputer aided design format, such as GDS II for example. As describedmore fully below, the routing of the circuit design is performed in sucha way as to greatly reduce and/or eliminate the existence of any hotspots on the final circuit design layout. The method 498 concludes atstep 501 with the output of a final layout of the circuit design takinginto account any corrections and/or changes made during the routingprocess to avoid the presence of hot spots.

FIG. 12 is a block diagram of an embodiment of a method of performingthe routing step 500 of the method 498 of FIG. 11. The method 500according to this aspect of the present disclosure is for routing thedesign layout of a semiconductor device to avoid hot spots. The method500 includes a routing process 502 and a hot spot filtering process 504.Each of the steps of the routing process 502 is subjected to acorresponding hot spot filter of the hot spot filtering process 504.Step 506 of the routing process is a global or chip-wide routing. Step506 provides the general layout for the device from which allmodifications will be made. A first hot spot filter 508 from thefiltering process 504 is applied to step 506. The first hot spot filter508 defines a first set of hot spot rules that the global routing mustcomply with. The specific rules of the hot spot filter 508 may beselected based on the desired design layout, the features sizes, theprocessing techniques, the desired properties (e.g., timing), and/or anyother features of the device or manufacturing process.

In at least one embodiment, the first hot spot filter 508 is the mostpessimistic of all of the hot spot filters. For example, the hot spotfilter 508 may assume that where the global routing could route thelines, vias, layers, or other features in such a way to create a hotspot, that the global routing will route the lines, vias, layers, orother features in that way. Thus, when the global routing provides sucha suggested route, the hot spot filter 508 would detect the potentialhot spot and communicate to the router to use an alternative route. Thehot spot filter 508 may analyze the suggested global layout bothsequentially (one line, via, layer, or other feature at a time) andconcurrently (considering multiple lines, vias, layers, or otherfeatures simultaneously). The first hot spot filter 508 also focuses onoptimizing the objectives of the device. For example, the hot spotfilter 508 may monitor that timing of sequential events is within thedesired range. Where the objectives of the device are not being met, thehot spot filter 508 will communicate to the router to use an alternativeroute. In some embodiments, the hot spot filter 508 itself is adapted toreroute the device layout to correspond with its rules.

The routing process 502 continues with step 510. Step 510 is a detailedrouting that provides an initial detailed layout for the device,including the proposed locations of all lines, vias, layers, and otherfeatures. A second hot spot filter 512 from the filtering process 504 isapplied to step 510. The second hot spot filter 512 defines a second setof hot spot rules that the detailed routing must comply with. In someembodiments, the second hot spot filter is less pessimistic than thefirst hot spot filter 508 and provides a more accurate analysis of wherehot spots are likely based on the layout. In some embodiments, thesecond hot spot filter considers each line, via, layer, or feature ofthe layout sequentially in an effort to detect potential hot spots.Again, the hot spot filter 512 will communicate to the router to use analternative route and/or reroute the device layout itself to correspondwhen its hot spot rules are violated.

The routing process 502 continues with step 514. Step 514 is apost-detailed routing that provides the detailed layout for the deviceafter modification based on the second hot spot filter. While the vastmajority of hot spots will be detected and eliminated after the globaland detailed routing have been subjected to the first and second hotspot filters, some hot spots may still exist due to the specific layout.Thus, a third hot spot filter 516 from the filtering process 504 isapplied to step 514. The third hot spot filter 514 defines a third setof hot spot rules that the post-detailed routing must comply with. Insome embodiments, the third hot spot filter is less pessimistic and morerealistic in its rules than both the first and second hot spot filters.In that regard, in some embodiments the hot spot filter includes a hotspot detector adapted to detect only existing hot spots not simplypotential hot spots. Any portions of the layout that violate the rulesof the third hot spot filter will be subjected to rerouting. In someembodiments, this reroute is performed manually by a rip-up and re-routetechnique. In other embodiments, the reroute is again performed by therouting system and/or the hot spot filter. The rerouting may be based onhot spot rules of the third hot spot filter and/or based on morestringent hot spot design rules. After this rerouting all of the hotspots should be eliminated from the device layout. The hotspot-freelayout is the final layout.

Though the hot spot filters have been described as having differentrules/definitions, in other embodiments the same hot spot filter may beused at. Further, the particular hot spot filter used for a certain stepof the routing process may be selected based on the design layout, thefeatures sizes, the processing techniques, or other reasons. A pluralityof hot spot filter definitions may be stored in a database for use inthe method. In some embodiments, a step of the routing process may notbe subjected to hot spot filtering. Further, in other embodiments therouting process 502 may include additional or fewer steps.

FIG. 13 is a block diagram of an embodiment of a method 520 according toone aspect of the present disclosure for modifying a circuit design tocreate a hotspot-free final layout. In some embodiments, the method 520may be used as part of the rerouting process associated with the thirdhot spot filter 516 in the method 500 above. Similarly, in someembodiments the method 520 is used as part of the modification processof any of the hot spot filters.

The method 520 begins with step 522 where a hot spot window is defined.The hot spot window is an area surrounding a potential or detected hotspot. The size of the hot spot window will vary depending on the natureof the hot spot detected. In most cases, the hot spot window is ofsufficient size to include all of the affected lines, vias, and featuresthat attribute to the hot spot. Once the hot spot window has beendefined at step 522, the method 520 continues with step 524 where a setof additional hot spot rules are applied to the hot spot window. In someembodiments, the additional hot spot rules are more stringent thanpreviously applied hot spot rules. Then based on the additional hot spotrules, the method 520 continues to step 526 with the rip-up andrerouting of the affected lines, vias, and other features within the hotspot window.

The rip-up and rerouting is limited to the hot spot window to avoid thepotential creation of hot spots in other areas of the device layoutoutside of the hot spot window. In that regard, in some embodiments theadditional hot spot rules prevent any vias from being moved, requiringother modifications to avoid the hot spot problems. In otherembodiments, the additional hot spot rules will allow a via to be moved,but only if it can be moved such that no other layers are affectedand/or need to be rerouted due to moving the via. In some embodiments,the hot spot rules will define a routing blockage adjacent the predictedor detected hot spot. The routing blockage may have a fixed orconfigurable size. The size of the routing blockage may be adapted forthe size and/or location of the hot spot. Any wire or feature must bererouted around the blockage in an effort to eliminate the hot spot.After the rip-up and rerouting, any previously existing or detected hotspots should be eliminated. If multiple hot spots were detected indifferent areas of the device, then multiple hot spot windows will bedefined and the lines, vias, and features of each hot spot window willbe subjected to the rip-up and reroute to eliminate any hot spot issues.Once all of the hot spot windows have been ripped-up and rerouted, themethod 520 continues to step 528 where the final layout is output.

FIGS. 14 and 15 are top-down views of a portion of a semiconductor wafer550 subject to at least one of the methods described above. As shown,the portion 550 includes a wire 552 and a wire 554. A via 556 connectsthe wire 552 to the wire 556. The portion 550 also includes a wire 558spaced from and extending substantially perpendicular to wire 554. Theportion 550 also includes a wire 560 spaced from and extendingsubstantially perpendicular to wire 558. In the current embodiment, thewire 560 is substantially parallel and aligned with the wire 554. Asshown more clearly in FIG. 15, the routing of the wires 554, 558, 560results in a hot spot 562. The hot spot 562 is shown as a pinchingeffect, but in other instances may be any other type of hot spot.Referring again to both FIGS. 14 and 15, a hot spot window 564 isdefined around the hot spot 562. In some embodiments, the wires 554,558, and 560 are then ripped up and rerouted within the hot spot window564, for example as described in method 520 above.

FIGS. 16 and 17 are top-down views of a portion of a semiconductor wafer570 subject to at least one of the methods described above. FIG. 17shows the portion of the semiconductor wafer 570 after reroutingaccording to one of the methods described above. As shown in FIG. 16,the portion 570 includes a wire 572 and a wire 574. A via 576 connectsthe wire 552 to the other wires (not shown). As shown, the routing ofthe wires 572, 574 results in a hot spot 578. The hot spot 578 is showngenerally and may represent any type of hot spot. A hot spot blockage580 is defined around the hot spot 578. In some embodiments, the wire572 is then ripped up and rerouted to avoid the hot spot blockage 580,as shown in FIG. 17 and described above with respect to method 520.

Referring now to FIG. 18, shown therein is an illustrative node 600 forimplementing embodiments of the methods described above. Node 600includes a microprocessor 602, an input device 604, a storage device606, a video controller 608, a system memory 610, and a display 614, anda communication device 616 all interconnected by one or more buses 612.The storage device 606 could be a floppy drive, hard drive, CD-ROM,optical drive, or any other form of storage device. In addition, thestorage device 606 may be capable of receiving a floppy disk, CD-ROM,DVD-ROM, or any other form of computer-readable medium that may containcomputer-executable instructions. Further communication device 616 couldbe a modem, network card, or any other device to enable the node tocommunicate with other nodes. It is understood that any node couldrepresent a plurality of interconnected (whether by intranet orInternet) computer systems, including without limitation, personalcomputers, mainframes, PDAs, and cell phones.

A computer system typically includes at least hardware capable ofexecuting machine readable instructions, as well as the software forexecuting acts (typically machine-readable instructions) that produce adesired result. In addition, a computer system may include hybrids ofhardware and software, as well as computer sub-systems.

Hardware generally includes at least processor-capable platforms, suchas client-machines (also known as personal computers or servers), andhand-held processing devices (such as smart phones, personal digitalassistants (PDAs), or personal computing devices (PCDs), for example).Further, hardware may include any physical device that is capable ofstoring machine-readable instructions, such as memory or other datastorage devices. Other forms of hardware include hardware sub-systems,including transfer devices such as modems, modem cards, ports, and portcards, for example.

Software includes any machine code stored in any memory medium, such asRAM or ROM, and machine code stored on other devices (such as floppydisks, flash memory, or a CD ROM, for example). Software may includesource or object code, for example. In addition, software encompassesany set of instructions capable of being executed in a client machine orserver.

Combinations of software and hardware could also be used for providingenhanced functionality and performance for certain embodiments of thepresent disclosure. One example is to directly manufacture softwarefunctions into a silicon chip. Accordingly, it should be understood thatcombinations of hardware and software are also included within thedefinition of a computer system and are thus envisioned by the presentdisclosure as possible equivalent structures and equivalent methods.

Computer-readable mediums include passive data storage, such as a randomaccess memory (RAM) as well as semi-permanent data storage such as acompact disk read only memory (CD-ROM). In addition, an embodiment ofthe present disclosure may be embodied in the RAM of a computer totransform a standard computer into a new specific computing machine.

Data structures are defined organizations of data that may enable anembodiment of the present disclosure. For example, a data structure mayprovide an organization of data, or an organization of executable code.Data signals could be carried across transmission mediums and store andtransport various data structures, and, thus, may be used to transportan embodiment of the present disclosure.

The system may be designed to work on any specific architecture. Forexample, the system may be executed on a single computer, local areanetworks, client-server networks, wide area networks, internets,hand-held and other portable and wireless devices and networks.

A database may be any standard or proprietary database software, such asOracle, Microsoft Access, SyBase, or DBase II, for example. The databasemay have fields, records, data, and other database elements that may beassociated through database specific software. Additionally, data may bemapped. Mapping is the process of associating one data entry withanother data entry. For example, the data contained in the location of acharacter file can be mapped to a field in a second table. The physicallocation of the database is not limiting, and the database may bedistributed. For example, the database may exist remotely from theserver, and run on a separate platform. Further, the database may beaccessible across the Internet. Note that more than one database may beimplemented.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein. Itis understood that various different combinations of the above-listedprocessing steps can be used in combination or in parallel. Also,features illustrated and discussed above with respect to someembodiments can be combined with features illustrated and discussedabove with respect to other embodiments. Those skilled in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions and alterations herein without departingfrom the spirit and scope of the present disclosure.

1. A method comprising: providing an input file in an electronic formatin a computer readable medium, wherein the input file comprises a devicelayout; fabricating a semiconductor device corresponding to the devicelayout of the input file; performing a first hot spot detection, using afirst hot spot detection machine, on the input file to detect a hot spotin the device layout of the input file; performing a second hot spotdetection, using a second hot spot detection machine, on thesemiconductor device to detect a hot spot in the semiconductor device;and comparing the hot spots detected by the first and second hot spotdetections in order for: modifying the device layout of the input filebased on the first hot spot detection when the hot spot is detected inthe device layout to create an output file if the hot spots detected bythe first and second hot spot detections are consistent with respect toeach other, and calibrating the first hot spot detection to correspondto the hot spot detected by the second hot spot detection when the hotspots detected by the first and second hot spot detections areinconsistent with respect to each other.
 2. The method of claim 1,wherein the performing a first hot spot detection comprises comparing atleast one parameter of the device layout to at least one of a pluralityof hot spot rules to determine if the at least one hot spot rule isviolated.
 3. The method of claim 2, wherein the plurality of hot spotrules are stored in a hot spot rules database.
 4. The method of claim 3,wherein the performing a first hot spot detection is performed by a hotspot detector, the hot spot detector in communication with the hot spotrules database.
 5. The method of claim 4, wherein the modifying thedevice layout is performed at least partially using a computer-aidedsystem.
 6. The method of claim 5, wherein the modifying the devicelayout is based on a set of modification guidance parameters.
 7. Themethod of claim 6, wherein the modification guidance parameters arebased upon the at least one hot spot rule that is violated.
 8. Themethod of claim 7, wherein the input file and the output file are in acomputer-aided design format.
 9. The method of claim 2, wherein thecalibrating comprises calibrating the plurality of hot spot rules. 10.The method of claim 9, wherein the calibrating the plurality of hot spotrules comprises comparing the first hot spot detection based on theplurality of hot spot rules to the hot spots detected by the second hotspot detection on the semiconductor device being a test wafer andmodifying the hot spot rules such that the first hot spot detection andthe second hot spot detection are consistent with respect to each other.11. A method comprising: providing an input file in an electronic formatin a computer readable medium, wherein the input file comprises a devicelayout having a plurality of local regions; selecting at least one localregion from the plurality of local regions of the device layout untilall of the plurality of local regions of the device layout have beenselected; performing first hot spot detections, using a first hot spotdetection machine, on each one of the local regions based on a pluralityof hot spot rules to detect hot spots in each one of the local regionsof the device layout, wherein at least one of the hot spot rulescorresponds to determining a pattern density of each one of the localregions exceeding a predetermined threshold; modifying each one of thelocal regions of the device layout based on the first hot spot detectedto create an output file; fabricating a semiconductor devicecorresponding to the output file; performing second hot spot detections,using a second hot spot detection machine, on the semiconductor devices;tuning the first hot spot detection machine and generating a modifiedoutput file in response to the second hot spot detections; andfabricating another semiconductor device using the modified output file.12. The method of claim 11, wherein the performing first hot spotdetections comprises comparing at least one parameter of each one of thelocal regions of the device layout to at least one of the plurality ofhot spot rules to determine if the at least one hot spot rule isviolated.
 13. The method of claim 12, wherein the modifying each one ofthe local regions of the device layout is performed at least partiallyusing a computer-aided system.
 14. The method of claim 13, wherein themodifying each one of the local regions of the device layout is based ona set of modification guidance parameters.
 15. The method of claim 14,wherein the modification guidance parameters are based upon the at leastone hot spot rule that is violated.
 16. The method of claim 11, whereinthe pattern density represents an area occupied by interconnects withineach one of the local regions divided by a total area occupied by eachone of the local regions.
 17. The method of claim 16, wherein thepredetermined threshold is about 90%.
 18. A method comprising: providingan input file including a device layout; fabricating a testsemiconductor device corresponding to the device layout of the inputfile; comparing by a first hot spot detector at least one parameter ofthe device layout to at least one of a plurality of hot spot rules todetermine if the at least one hot spot rule is violated by the at leastone parameter of the device layout; comparing by a second hot spotdetector at least one parameter of the test semiconductor device to theat least one of the plurality of hot spot rules to determine if the atleast one hot spot rule is violated by the at least one parameter of thetest semiconductor device, wherein the at least one parameter of thetest semiconductor device is substantially the same as the at least oneparameter of the device layout; modifying the device layout of the inputfile when the at least one parameter of the device layout and the atleast one parameter of the test semiconductor device both violate the atleast one hot spot rule to avoid violating the at least one hot spotrule, wherein the device layout is modified based upon a plurality ofmodification guidance parameters that are associated with the pluralityof hot spot rules; creating an output file based on the modified devicelayout; and fabricating a production semiconductor device correspondingto the output file.
 19. The method of claim 18, wherein the input fileand the output file are in a computer aided design format and whereinthe modifying the device layout is performed at least partially using acomputer-aided system.